3 cuotas Capacity 512GB
Form factor M.2 2280
NAND Flash 3D NAND
Controller RTS5766DL
Interface PCIe Gen3 x4
Sequential Read (Max) Up to 2,400MB/s
Sequential Write (Max) Up to 1,800MB/s
4KB Random Read IOPS(Max) Up to 200K
4KB Random Write IOPS(Max) Up to 150K
Operating temperature 0°C - 70°C
Storage temperature -40°C - 85°C
Shock resistance 1500G/0.5ms
MTBF 1,500,000 hours
Terabytes Written (TBW) 520TB
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